| 摘要 |
PROBLEM TO BE SOLVED: To enable the formation of a homogeneous, conformable silicon oxide film without the generation of HCl. SOLUTION: A wafer (substrate) 1 is transported into a processing chamber 52 using a transportation means 65. After the wafer transportation, a first reactive substance containing Si<SB>2</SB>Cl<SB>6</SB>(HCD) is supplied into the processing chamber 52 using a first supply system 61 while being exhausted from an exhaust system 64. An inert gas is supplied into the processing chamber 52 using a third supply system 63, while the residual first reactive substance is exhausted from the exhaust system 64. Thereafter, a second reactive substance not containing hydrogen atoms and containing oxygen atoms is supplied into the processing chamber 52 using a second supply system 62, while being exhausted from the exhaust system 64. An inert gas is supplied into the processing chamber 52 using a third supply system 63, while the residual second reactive substance is exhausted from the exhaust system 64. A series of such processes are repeated a plurality of times using a control device 9 to deposit an SiO<SB>2</SB>film having a predetermined thickness on the wafer (substrate) 1. After the deposition, the wafer 1 is transported out of the processing chamber 52 using the transportation means 65. COPYRIGHT: (C)2005,JPO&NCIPI
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