| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a solution and a method for polishing barrier metal by which Ta-based films and Ti-based metallic films can be polished even without containing any oxidizing agent. <P>SOLUTION: In the method of polishing barrier metal, the Ta-based films and Ti-based metallic films contained in a copper-based metallic wiring layer as a barrier metal layer are selectively polished by polishing a semiconductor wafer substrate etc., containing the copper-based metallic wiring layer by CMP by using the polishing solution containing at least aminobenzoic acid and abrasive grains. In addition, the polishing processing performance of the polishing solution is arbitrarily controlled by changing the relative polishing performance of the solution between the Ta- and T-based metallic films and copper-based metallic films by adding an oxidizing agent or reaction suppressor to the solution or changing the pH of the solution. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
