| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a p-channel trench MOSFET which is of high quality and capable of operating stably. SOLUTION: In the method of manufacturing the p-channel trench MOSFET having a p-type gate electrode; a process of implanting BF<SB>2</SB>ions into a polycrystalline silicon film and then depositing another polycrystalline silicon film, an ion implanting process, and a thermal treatment process, are carried out several times in succession to form the gate electrode, whereby the p-channel trench MOSFET that operates stably and is of high quality can be obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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