发明名称 SUBSTRATE TREATMENT SYSTEM
摘要 PROBLEM TO BE SOLVED: To attain excellent work efficiency, fabrication efficiency and low cost while preventing the generation of particles by prolonging the lifetime of a high temperature valve significantly and preventing the frequent replacement thereof thereby extending the down-time interval of a substrate treatment system and enhancing the rate of operation of the system. SOLUTION: The substrate treatment system comprises a treatment chamber 3 for treating a substrate 12, a treatment gas line 4 for supplying treatment gas to the treatment chamber 3, a plurality of valves V1, V2, V3 and V4 provided in series in the treatment gas line 4, and a control means for supplying treatment gas to the treatment gas line 4 while closing the valve V1 located on the most downstream side and opening other valves, filling the space between adjacent valves in the treatment gas line 4 with the treatment gas by closing all valves subsequently, and supplying the treatment gas intermittently to the treatment chamber 3 by opening the valves sequentially starting from the valve located on the most downstream side. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005056918(A) 申请公布日期 2005.03.03
申请号 JP20030206174 申请日期 2003.08.06
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 NOUCHI HIDEHIRO;WADA TETSUYA
分类号 C23C16/455;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/455
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