| 摘要 |
PROBLEM TO BE SOLVED: To stabilize element characteristics by forming a diffusion layer including low concentration diffusion layers becoming a source and a drain on one side of a gate electrode. SOLUTION: The gate electrode 13 is formed on a semiconductor substrate 11 through a gate insulating film 12. A first diffusion layer 15 is formed on the semiconductor substrate 11 on one side of the gate electrode 13 through a first low concentration diffusion layer 16. A second diffusion layer 17 is formed on the semiconductor substrate 11 on one side of the gate electrode 13 through a first low concentration diffusion layer 18 by separating it from the first diffusion layer 15 and the first low concentration diffusion layer 16. A diffusion layer separation region 21 is formed on the semiconductor substrate 11 so that it enters a partial lower side of the gate electrode 13 by separating the first diffusion layer 15 and the first low concentration diffusion layer 16, and separating the second diffusion layer 17 and the second low concentration diffusion layer 18. COPYRIGHT: (C)2005,JPO&NCIPI
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