发明名称 Verfahren zur Polarisation eines piezoelektrischen/elektrostriktiven filmartigen Chips
摘要 <p>A method for polarization treatment of a piezoelectric/electrostrictive film type chip, comprising: providing a piezoelectric/electrostrictive film type chip (20) with a plurality of piezoelectric/electro-strictive film type elements each having a piezoelectric/electrostrictive section constituted by a thin diaphragm, a lower electrode formed on the diaphragm, a piezoelectric/electrostrictive layer formed on the lower electrode, and an upper electrode formed on the piezoelectric/electrostrictive layer, dividing the plurality of piezoelectric/electrostrictive film type elements into two or more element groups (25a,b,c) and subjecting the element groups to polarization treatment independently. The chip after the treatment is low in dielectric breakdown and can be used as a reliable piezoelectric/electrostrictive film type chip. <IMAGE></p>
申请公布号 DE69828762(D1) 申请公布日期 2005.03.03
申请号 DE1998628762 申请日期 1998.11.25
申请人 NGK INSULATORS, LTD. 发明人 YANO, SHINSUKE;MIZUTANI, TOSHIHISA;KOMAZAWA, MASATO
分类号 B41J2/045;B41J2/055;B41J2/135;B41J2/14;B41J2/16;H01L41/257;(IPC1-7):H01L41/22 主分类号 B41J2/045
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