SEMICONDUCTOR DEVICE AND ITS FABRICATING PROCESS

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a low breakdown voltage MOS, a high breakdown voltage MOS, and a bipolar transistor formed on the same semiconductor substrate in which a high reliability npn transistor having a low leak current with no variation is fabricated, and to provide its fabricating process. SOLUTION: A high reliability npn transistor insusceptible to the effect of charges on an LOCOS oxide film 9 or to the effect of a voltage being applied to an interconnect line on the LOCOS oxide film 9 and having a low leak current with no variation can be fabricated by forming an anti-inversion region B on the surface layer of the p base region 6 of the npn transistor. Furthermore, the cost can be reduced by employing p+field ion implantation for forming the anti-inversion region B. COPYRIGHT: (C)2005,JPO&NCIPI