发明名称 Write path scheme in synchronous DRAM
摘要 The disclosed is a write path scheme in a synchronous DRAM having: a data converter unit to convert serial input data to parallel output data, a multiplexer to output data from the data converter unit depending on a first mode selection signal and a second mode selection signal, and a data input/output sense amplifier having a plurality of sense amplifiers to separately operate the plurality of sense amplifiers depending on the first mode selection signal and the second mode selection signal to sense data from the multiplexer and then load the data on a global input/output line. Also included is a write driver to load data from the global input/output line on a local input/output line.
申请公布号 US2005047264(A1) 申请公布日期 2005.03.03
申请号 US20030741059 申请日期 2003.12.19
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE SANG HEE
分类号 G11C11/40;G11C7/00;G11C7/10;G11C8/00;G11C11/4063;G11C11/409;G11C11/4096;(IPC1-7):G11C8/00 主分类号 G11C11/40
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