SEMICONDUCTOR CAPACITOR PROCESSING IN LOWER TEMPERATURE BY FORMING GAS AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor capacitor and a method for manufacturing the same are provided to enhance the process stability by processing in the lower temperature with a forming gas. CONSTITUTION: A first dielectric film(2) is formed on a substrate(1) that a predetermined device is formed thereon by nitriding the substrate with a forming gas. A second dielectric film(3) is formed by the reoxidation process after depositing a transition element on the first dielectric film. A third dielectric film(4) is formed by nitriding the second dielectric film with the forming gas. A conductive body(5) is formed on the third dielectric film.