HIGH SPEED LOW POWER MAGNETIC DEVICES BASED CURRENT INDUCED SPIN-MOMENTUM TRANSFER

摘要

The present invention describes a high-speed and low-power method by which a spin-polarized electrical current can be used to control and switch the magnetization direction of a magnetic region in such a device. The magnetic device comprises a pinned magnetic layer (FM1) with fixed magnetization direction, a free magnetic layer (FM2) with free magnetization direction, an d a read-out magnetic layer (FM3) with fixed magnetization direction. The pinn ed layer (FM1) and free layer (FM2) are separated by a non-magnetic layer (N1), and the free layer (FM2) and read-out layer (FM3) are separated by another n on- magnetic layer (N2). The non-magnetic layers minimize the magnetic interacti on between the magnetic layers. A current is applied to the device to induce a torque that alters the magnetic state or resistance of the device for writin g information. The resistance is measured to thereby read out the information stored in the device.