Semiconductor integrated circuit

摘要

A semiconductor integrated circuit according to the present invention comprises a circuit as a controlled object including an MOS transistor, wherein a control potential (at least one of a substrate potential and source potential) is to be controlled, a control signal generation circuit for generating a control signal with respect to the control potential based on an internal signal of the circuit as the controlled object, and a control potential control circuit for controlling the control potential (substrate potential/source potential) of the MOS transistor based on the control signal.