发明名称 |
Method and apparatus for chemical mechanical polishing |
摘要 |
A polishing device (16) is hermetically accommodated in a chamber (13) containing an atmosphere having a composition different from the ambient air, so that the atmosphere around the polishing device (16) is altered into the composition different from the ambient air, and voltage is applied between a wafer (W) and a polishing pad (34a) to polish the wafer (W) with an electrolytic effect. The polishing device (16) has the atmosphere containing extremely less oxygen, preventing a surface of the wafer (W) from oxidation and thereby providing a constant polishing rate. <IMAGE> |
申请公布号 |
EP1362670(A3) |
申请公布日期 |
2005.03.02 |
申请号 |
EP20030011243 |
申请日期 |
2003.05.16 |
申请人 |
TOKYO SEIMITSU CO.,LTD.;DOI, TOSHIRO |
发明人 |
DOI, TOSHIRO;FUJITA, TAKASHI |
分类号 |
B24B37/00;H01L21/304 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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