CAM (Content addressable memory) with floating gate and corresponding manufacturing process

摘要

A CAM (Content Addressable Matrix) memory cell (10) integrated on a semiconductor substrate (11) is described, of the type comprising a plurality of floating gate memory cells (12), matrix-organised in rows, called word lines, and columns, called bit lines, the cells (12) belonging to a same row and having floating gate electrodes being short-circuited with each other in order to form a single floating gate electrode (16) for the CAM memory cell (10). Advantageously according to the invention, the single floating gate electrode (16) comprises at least a cavity or removed portion (17) realised in at least a side wall of the single floating gate electrode (16). A process for manufacturing CAM memory cells (10) integrated on a semiconductor substrate (11) is also described.