发明名称 |
Electron beam exposure mask, electron beam exposure method, method of fabricating semiconductor device, and electron beam exposure apparatus |
摘要 |
An electron beam exposure mask comprises a main mask and one or more compensation masks. The main mask has a plurality of first defined masks. The compensation mask includes one or more non-defective second defined masks each having a pattern configuration to be formed in a defective among said first defined masks. In performing exposures by using this electron beam exposure mask, first defined masks are used as long as the first defined masks are non-defective, and the second defined mask corresponding to a first defined mask is used when the first defined mask is defective. |
申请公布号 |
US6861657(B2) |
申请公布日期 |
2005.03.01 |
申请号 |
US20030657429 |
申请日期 |
2003.09.08 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
MIYASAKA MAMI |
分类号 |
H01J37/305;G03F1/00;G03F1/14;G03F1/16;G03F1/20;G03F7/20;G03F9/00;G21G5/00;H01J37/317;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
H01J37/305 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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