发明名称 |
Fotomasker, lithografiewerkwijze, en werkwijze voor het vervaardigen van het fotomasker. |
摘要 |
A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters. |
申请公布号 |
NL1026914(A1) |
申请公布日期 |
2005.03.01 |
申请号 |
NL20041026914 |
申请日期 |
2004.08.26 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TAKASHI SATO;TAKASHI SAKAMOTO |
分类号 |
G03B15/00;B64D47/08;F16M11/04;F16M13/02;G01B11/00;G01B11/25;G01M11/02;G02F1/01;G03B17/56;G03C5/00;G03F1/26;G03F1/32;G03F1/42;G03F1/68;G03F7/027;G03F7/20;G03F7/207;G03F9/00;G06K9/00;G21K5/00;H01L21/027;H04N5/222 |
主分类号 |
G03B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|