| 摘要 |
PURPOSE: An enable signal generating circuit for a local I/O(input/output) sense amplifier and an enable signal generating circuit for an I/O sense amplifier are provided to have develop margin of a local I/O line pair and a global I/O line pair by controlling the enable time according to the frequency. CONSTITUTION: An enable signal generating circuit for a local I/O(input/output) sense amplifier in a semiconductor memory device, comprises tDAC register(34) for supplying tDAC information; a delay means(32) for receiving a column latch signal(COLLAT), a write signal(WRITE) and an output signal from the tDAC, and for outputting an enable signal(PLIOSE) for the local I/O sense amplifier. And an enable signal generating circuit for an I/O sense amplifier in a semiconductor memory device, comprises tDAC register for supplying tDAC information; a delay means for receiving a column cycle signal(COLCYC), a write signal(WRITE) and an output signal from the tDAC, and for outputting an enable signal(PIOSE) for the I/O sense amplifier.
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