| 发明名称 |
Semiconductor device including a layer having a beta-crystal structure |
| 摘要 |
A barrier layer is formed on an insulating or conducting film provided on a semiconductor substrate, and an electrode or an interconnect made from a conducting film is formed on the barrier layer. The barrier layer includes a tantalum film having the beta-crystal structure.
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| 申请公布号 |
US2005035454(A1) |
申请公布日期 |
2005.02.17 |
| 申请号 |
US20040882256 |
申请日期 |
2004.07.02 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KISHIDA TAKENOBU;TADA SHINYA;IKEDA ATSUSHI;HARADA TAKESHI;SUGIHARA KOHEI |
| 分类号 |
H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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