Light emitting element, method of manufacturing the same, and semiconductor device having light emitting element

摘要

An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1 an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2 an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3 an Al layer as a high-reflection electrode, {circle over (4 a Ti layer having a barrier function, and {circle over (5 an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.