发明名称 Sidewalls as semiconductor etch stop and diffusion barrier
摘要 Methods and apparatus of forming a semiconductor device using pedestals and sidewalls. The pedestals and sidewalls may provide an etch stop and/or a diffusion barrier during manufacture of a semiconductor device. Processes of forming diode connected vertical cylindrical field effect devices are disclosed to exemplify the use of the pedestals and/or sidewalls. A system for forming the pedestals and sidewalls is described.
申请公布号 US6855614(B2) 申请公布日期 2005.02.15
申请号 US20010982855 申请日期 2001.10.22
申请人 INTEGRATED DISCRETE DEVICES, LLC 发明人 METZLER RICHARD A.
分类号 H01L29/861;H01L21/308;H01L21/329;H01L21/337;H01L21/8234;H01L27/02;H01L29/808;(IPC1-7):H01L21/331;H01L21/44 主分类号 H01L29/861
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