发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. By performing the formation of the pixel electrode, the source region and the drain region by using three photomasks in three photolithography steps, a liquid crystal display device prepared with a pixel TFT portion, having a reverse stagger type n-channel TFT, and a storage capacitor can be realized.
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申请公布号 |
US6855957(B1) |
申请公布日期 |
2005.02.15 |
申请号 |
US20000566722 |
申请日期 |
2000.05.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KOYAMA JUN |
分类号 |
G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L27/13;H01L29/786;(IPC1-7):H01L29/04 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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