发明名称 |
THIN FILM FORMATION METHOD BY ELECTROMAGNETIC WAVE IRRADIATION |
摘要 |
PROBLEM TO BE SOLVED: To provide an optimum film composition and electromagnetic wave irradiation process for performing heat-treatment of a thin film by its exposure to an electromagnetic wave with a millimetric wave spectrum. SOLUTION: In a method of forming the thin film by electromagnetic wave irradiation, the thin film and a conductor layer formed therein are exposed to an electromagnetic wave with a wavelength of≥10 GHz. Here, the conductor layer has a thickness of 5-20 nm, and at least one conductor layer is formed inside the thin film or at its contact part. Self-heating of the conductor layer and exposure of the thin film to the electromagnetic wave can be simultaneously performed, so an effective heat-treatment process of the thin film by electromagnetic wave irradiation can be realized. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005035831(A) |
申请公布日期 |
2005.02.10 |
申请号 |
JP20030273972 |
申请日期 |
2003.07.14 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OTSUKA TAKASHI;MORIMOTO TADASHI |
分类号 |
C30B33/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):C30B33/04 |
主分类号 |
C30B33/04 |
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