发明名称 THIN FILM FORMATION METHOD BY ELECTROMAGNETIC WAVE IRRADIATION
摘要 PROBLEM TO BE SOLVED: To provide an optimum film composition and electromagnetic wave irradiation process for performing heat-treatment of a thin film by its exposure to an electromagnetic wave with a millimetric wave spectrum. SOLUTION: In a method of forming the thin film by electromagnetic wave irradiation, the thin film and a conductor layer formed therein are exposed to an electromagnetic wave with a wavelength of≥10 GHz. Here, the conductor layer has a thickness of 5-20 nm, and at least one conductor layer is formed inside the thin film or at its contact part. Self-heating of the conductor layer and exposure of the thin film to the electromagnetic wave can be simultaneously performed, so an effective heat-treatment process of the thin film by electromagnetic wave irradiation can be realized. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005035831(A) 申请公布日期 2005.02.10
申请号 JP20030273972 申请日期 2003.07.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTSUKA TAKASHI;MORIMOTO TADASHI
分类号 C30B33/04;H01L21/316;H01L21/822;H01L21/8246;H01L27/04;H01L27/105;(IPC1-7):C30B33/04 主分类号 C30B33/04
代理机构 代理人
主权项
地址