| 摘要 |
PROBLEM TO BE SOLVED: To reduce the size of a unit capacitive element array while enhancing the precision. SOLUTION: In the semiconductor device having capacitive element groups C1 and C2 each consisting of a plurality of unit capacitive elements Cu, electrodes 8 for taking out the lower electrode of respective unit capacitive elements in the capacitive element group are arranged on the entire outer circumference of the upper electrodes 7 in the capacitive element group. The capacitive element group can be connected with specified capacitive elements having a capacitance set to eliminate the effect of at least parasitic capacitance of the capacitive element group. The specified capacitive elements may comprise a capacitive element group. COPYRIGHT: (C)2005,JPO&NCIPI
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