| 发明名称 |
Method of producing rough polysilicon by the use of pulsed plasma chemical vapor deposition and products produced by same |
| 摘要 |
A method for depositing a rough polysilicon film on a substrate is disclosed. The method includes introducing the reactant gases argon and silane into a deposition chamber and enabling and disabling a plasma at various times during the deposition process.
|
| 申请公布号 |
US2005029570(A1) |
申请公布日期 |
2005.02.10 |
| 申请号 |
US20040930443 |
申请日期 |
2004.08.31 |
| 申请人 |
SANDHU GURTEJ S.;DOAN TRUNG T. |
发明人 |
SANDHU GURTEJ S.;DOAN TRUNG T. |
| 分类号 |
C23C16/24;C23C16/515;H01L21/02;H01L21/285;(IPC1-7):H01L27/108;H01L29/76;H01L21/20;C30B1/00 |
主分类号 |
C23C16/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
