| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive photoresist composition having high exposure latitude for forming a resist pattern on a substrate and capable of forming a pattern with excellent resolution and perpendicularity, and to provide a method for forming a resist pattern. <P>SOLUTION: The positive photoresist composition contains: (A) an alkali-soluble novolac resin in which hydrogen atoms in all of the phenolic hydroxyl groups are partially substituted for 1,2-naphthoquinone diazide sulfonyl groups; and (B) a dissolution accelerator expressed by general formula (I). <P>COPYRIGHT: (C)2005,JPO&NCIPI |
