发明名称 INTERPOSER SUBSTRATE, INTERPOSER SUBSTRATE WITH SEMICONDUCTOR DEVICE, PACKAGE WITH INTERPOSER SUBSTRATE, STRUCTURE CONSISTING OF SEMICONDUCTOR DEVICE, INTERPOSER SUBSTRATE AND PACKAGE, AND METHOD OF MANUFACTURING INTERPOSER SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To build up a substrate for making an IC chip compromise with an IC package, focusing attention on a difference in role between each interconnection owned by the IC package, and to stabilize electrical propagation between the IC chip and the IC package via each interconnection. SOLUTION: A main body of the interposer substrate 10 comprises a capacitor 11 wherein a multilayer ceramic capacitor 12 which has a ceramic layer 14 between internal electrodes 13 is arranged, and a section 20 having a low dielectric constant which is formed of a material having a lower dielectric constant than that of the ceramic layer 14. The capacitor 12 has many via electrodes 15 in a passing-through structure having a conductivity path established between the internal electrodes 13 and themselves. The via electrodes 15 are used as power lines and ground lines to the IC chip 30. The section 20 having a low dielectric constant is equipped with columnar electrodes 22 which are extended through the section 20 having a low dielectric constant without any contact with the ceramic layer 14. The columnar electrodes 22 are used as signal lines to the IC chip 30. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005039006(A) 申请公布日期 2005.02.10
申请号 JP20030199245 申请日期 2003.07.18
申请人 NGK SPARK PLUG CO LTD 发明人 HAYASHI KAZUHIRO;SATO MOTOHIKO;OTSUKA ATSUSHI;SATO MANABU
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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