| 摘要 |
A laser device is disclosed which stabilizes impedance at laser drive initiation, and in which an oscillation at low current, a high reaction speed, a low noise, and the like are achieved. A semiconductor laser device includes first and second conductive type semiconductor layers, an active layer, and first and second electrodes. The second electrode comprises an ohmic electrode and a pad electrode. The first electrode is formed on the same planar side of the first conductive type semiconductor layer as the second electrode, and is disposed in the same direction as the pad electrode with respect to the ohmically connected region. The second conductive type semiconductor layer is set to a width that can secure light confinement on both sides of the ohmically connected region.
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