| 发明名称 |
A SURFACE GEOMETRY FOR MOS-GATED DEVICE |
| 摘要 |
A surface geometry for a MOS-gated device is provided that allows device size to be varied in both the x-axis and the y-axis by predetermined increments. The actual device size is set or "programmed" by the metal and pad masks or the contact metal and pad masks. This approach saves both time and expense. A 7X9 array (11) of identical tiles (13) is shown. |
| 申请公布号 |
EP1504467(A1) |
申请公布日期 |
2005.02.09 |
| 申请号 |
EP20030731142 |
申请日期 |
2003.05.09 |
| 申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
BLANCHARD, RICHARD, A. |
| 分类号 |
H01L21/336;H01L21/76;H01L27/02;H01L29/06;H01L29/423;H01L29/78;(IPC1-7):H01L21/336;H01L29/76 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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