发明名称 |
Liquid crystal display device including a lightly doped drain region |
摘要 |
Pixel TFTs (channels 201) are formed along gate lines 61 such that centers of the channels 201 are positioned in positions arranged on a line A-A passing through intermediate positions between adjacent two data lines 81. A gate side LDD region 41 and a pixel side LDD region 42 of the pixel TFT are formed symmetrically about the line A-A and the storage capacitors are formed symmetrically about the line A-A. With such construction, it is possible to make leakage currents in the two LDD regions of each of the pixel TFTs of a liquid crystal display device equal each other.
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申请公布号 |
US6853407(B2) |
申请公布日期 |
2005.02.08 |
申请号 |
US20020196356 |
申请日期 |
2002.07.17 |
申请人 |
NEC CORPORATION |
发明人 |
SATO TETSUSHI;SEKINE HIROYUKI;YOSHINAGA KAZUHIDE |
分类号 |
G02F1/1368;G09F9/30;G09F9/35;H01L21/336;H01L29/786;(IPC1-7):G02F1/136;G02F1/133;H01L29/04 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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