| 摘要 |
PURPOSE: A non-volatile ferroelectric random access memory device is provided to reduce the cell size for embodying a high integrated memory cell by using a plate line in common. CONSTITUTION: A non-volatile ferroelectric random access memory device comprises a timing data buffer, a data buffer bus part, a timing data register array, plural cell array blocks, and a common data bus part. And each cell array block has plural sub cell array blocks(SCA_B) consisting of plural unit sub cell arrays(SCA(0)-SCA(m)). Wherein, plural unit cells(C1-C4) in the sub cell array block(SCA_B) use one plate line(PL) in common, so unit cells(C1, C2) connected with one of word line(WL(0)) is activated simultaneously while unit cells(C3, C4) connected with another word line(WL(n)) is not activated.
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