| 摘要 |
<p>The invention relates to a method for surface treatment of a wafer of semiconductor material for microelectronic and/or optoelectronic applications. Said method comprises a step of annealing said material under an oxidizing atmosphere and a step of polishing said material with an abrasive, based on colloidal silica particles. Said polishing step can be carried out by means of a polishing head (10), into which a substrate (12) of semiconductor material is introduced. The abrasive liquid is injected into the head, for example, via a lateral duct (18). A pressure (20) and a movement, indicated by the arrow (22), are applied to the head (10), for polishing against a polishing cloth (14). The combination of both steps permits a satisfactory surface state to be obtained, especially in the case of silicon carbide.</p> |
