| 摘要 |
PROBLEM TO BE SOLVED: To continuously form thin films of a semiconductor crystal which have desired characteristics by including data about a remaining quantity of a semiconductor material within a molecular beam source cell in the calculation of a controlled quantity of temperature of the molecular beam source cell, which suppresses a change in molecular beam intensity due to a decrease of the semiconductor material and keeps the molecular beam intensity constant. SOLUTION: In the method for forming a thin film, data about the molecular beam source cell such as an initial quantity of the semiconductor material put into a crucible which is input from outside, data about the operation of a thin film formation apparatus, data about the quality of a formed thin film are stored in a memory, these stored data are read out from the memory, the controlled quantity of temperature of the molecular beam source cell is calculated, and the temperature of the molecular beam source cell is controlled based on the calculated controlled quantity of temperature of the molecular beam source cell. In the method, when calculating the controlled quantity of temperature of the molecular beam source cell, the temperature of the molecular beam source cell is corrected according to a remaining quantity of the semiconductor material within the molecular beam source cell. COPYRIGHT: (C)2005,JPO&NCIPI
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