| 摘要 |
PROBLEM TO BE SOLVED: To provide a Darlington transistor having excellent characteristics. SOLUTION: With a forward bias voltage applied to the Darlington transistor 1, some holes in a first base region 12 are attracted by electrons in a collector region 11, and move into the collector region 11. An n<SP>+</SP>-type semiconductor region 16 is charged positive because electrons of atoms of the high-concentration n-type impurity are drawn to a collector electrode 33. The holes that have moved from the first base region 12 to the collector region 11 are prevented from moving/diffusing to/into the low voltage emitter electrode 30 in the presence of a positively charged n<SP>+</SP>-type semiconductor region 16 on the way, and have to stay in the vicinity of the first base region 12. Under the circumstances, holes in the vicinity of the first base region 12 are promptly extracted upon application of a reverse bias to the voltage across the emitter and the base, and this suppresses the occurrence of a tail current. COPYRIGHT: (C)2005,JPO&NCIPI |
