MANUFACTURING METHOD OF n-InGaAs SEMICONDUCTOR AND GROUP III-V COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide the manufacturing method of an n-InGaAs semiconductor and a group III-V compound semiconductor device with which contact resistance of a low value is kept as in those growing by conventional technique, wherein n-InGaAs with high carrier concentration of 4×1019cm-3is grown while keeping surface unevenness at the same level, in addition with an n-type dopant flow rate reduced, and is efficiently epitaxially grown. SOLUTION: When a HEMT is formed by epitaxially growing a buffer layer 11, a channel layer 12, a spacer layer 13, a carrier supply layer 14 and a contact layer 15b successively on a substrate 10, a material from an In source, a material from a Ga source, and a material from an As source are supplied to grow an InGaAs semiconductor layer. While the InGaAs semiconductor layer is growing, DESe is supplied, thereby doping Se into the InGaAs semiconductor layer to form an n-InGaAs semiconductor contact layer. COPYRIGHT: (C)2005,JPO&NCIPI