| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a trench gate structure which is high in breakdown voltage performance and can be made fine in size. SOLUTION: The method of manufacturing the semiconductor device comprises a step S1 of forming a first conductivity-type semiconductor layer on a first conductivity-type semiconductor substrate, a step S2 of cutting a trench in the semiconductor layer, a step S3 of removing damage to the inner wall of the trench, a step S4 of forming a first conductivity-type epitaxial layer on the inner wall, and a step S7 of forming a gate insulating film on the epitaxial layer of superior crystallinity, wherein the trench widened by removal of the damage is narrowed by the formation of the epitaxial layer, and the gate insulating film is improved in breakdown voltage performance. COPYRIGHT: (C)2005,JPO&NCIPI
|
