PLASMA PROCESSING INSTALLATION, INFLUENCED BY A MAGNETIC FIELD, FOR PROCESSING A CONTINUOUS MATERIAL OR A WORKPIECE

摘要

The invention relates to a plasma processing installation that is influenced by a magnetic field for processing a continuous material (1) or a workpiece. Said installation comprises at least one discharge chamber (3a), which can be evacuated and contains an anode (5) that is electrically insulated and arranged around the continuous material or the workpiece, a device for establishing a gas atmosphere in the discharge chamber(s), and an energy supply device for the provision of a voltage or current that is sufficient for a gas discharge between the continuous material or workpiece acting as the internal electrode and the external electrode. The aim of the invention is to achieve significantly higher plasma current densities, in particular with a magnitude of A/cm<2> and thus significantly higher processing speeds. To increase the obtainable energy density of the gas discharge, a high-performance magnet assembly (61, 62) is located in the vicinity of the external electrode to generate a magnetic field, in particular of at least 50mT, preferably of at least 100mT and optionally in excess of 400mT.