发明名称 ETCHING SOLUTION FOR THIN FILM OF METALLIC SILVER OR SILVER ALLOY, AND ETCHING METHOD USING THE SOLUTION
摘要 PROBLEM TO BE SOLVED: To provide an etching solution for etching a thin film of metallic silver or a silver alloy with an adequate precision of a dimension, and to provide an etching method using the solution. SOLUTION: The etching solution used for etching the thin film made of metallic silver or the silver alloy comprises: a mixed solution having a composition of 23-47 wt.% phosphoric acid, 3-7 wt.% nitric acid and 74-46 wt.% water; and 0.05 to 0.2 wt.% silver nitrate which is an additive. The etching method using the etching solution includes just immersing the thin film of metallic silver or the silver alloy into the etching solution in a resting state in an etching step, and does not need such a streaming of a solution or a swinging of a substrate as to have been carried out in a conventional method. Then, the etching solution provides the adequate reproducibility of an etching rate, and makes the thin film of metallic silver or the silver alloy etched with the adequate precision of the dimension. As a result, a side etching is inhibited and a satisfactory pattern is formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005029869(A) 申请公布日期 2005.02.03
申请号 JP20030273056 申请日期 2003.07.10
申请人 ULVAC SEIMAKU KK 发明人 YAMADA FUMIHIKO;OKASAKA KENSUKE
分类号 G02F1/1343;C23F1/30;H01L21/308;(IPC1-7):C23F1/30;G02F1/134 主分类号 G02F1/1343
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