| 摘要 |
PROBLEM TO BE SOLVED: To provide an optimized manufacturing method of a silicon wafer which can obtain the silicon wafer in which oxygen doping concentration having low defect density is at least 4×10<SP>17</SP>/cm<SP>3</SP>in especially near front surface region. SOLUTION: In the manufacturing method, (a) a silicon single crystal is processed which has an oxygen doping concentration of at least 4×10<SP>17</SP>/cm<SP>3</SP>and a nitrogen doping concentration of at least 1×10<SP>14</SP>/cm<SP>3</SP>, (b) the silicon wafer is formed by processing the silicon single crystal obtained by (a), and (c) the silicon wafer obtained by (b) is annealed at least at the temperature of 1000°C and for at least 1 hour. The distribution of defect size is shifted toward that of much smaller one by the nitrogen doping. When the silicon single crystal is manufactured in such a way that it is pulled up by Czochralski method in (a), the silicon single crystal under raising is forcibly cooled in such a manner that it stays at 1100°C to 850°C for under 80 minutes. COPYRIGHT: (C)2005,JPO&NCIPI
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