| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which improves the adhesion of a bump electrode and a method of ultrasonic bonding therefor. SOLUTION: In a semiconductor device in which a bump electrode is formed on the surface of the semiconductor device, a single or a plurality of grooves are formed on the semiconductor layer on which the bump electrode is formed, wherein at least part of sidewalls of the grooves is so formed as to be of an inverse tapered shape. In particular, when GaAs whose crystal plane of the surface is a (100) plane is used, the inverse tapered shape having sidewalls of (111) crystal planes can be simply formed. In carrying out ultrasonic bonding, the ultrasonic vibration for the bonding is applied in the direction perpendicular to the longitudinal side of the inverse tapered cross-sectional groove. COPYRIGHT: (C)2005,JPO&NCIPI
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