发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
The present invention relates to a semiconductor device and a method of fabricating the same for simplifying a fabrication process of the semiconductor device and enhancing the performance and yield of the device. A first metal wiring on a semiconductor substrate serves as a first electrode of a metal-insulator-metal (MIM) capacitor. A dielectric film pattern is formed on the first metal wiring. A first via-contact plug on the dielectric film pattern contacts a side of the first metal wiring. An interlayer insulation film is formed having second via-contact plugs in a parallel array structure. The second via-contact plugs contact the dielectric film pattern and serve as a second electrode of the MIM capacitor. A second metal wiring is formed on the interlayer insulation film to contact the first via-contact plug and the second via-contact plugs.
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申请公布号 |
US2005026356(A1) |
申请公布日期 |
2005.02.03 |
申请号 |
US20040857851 |
申请日期 |
2004.06.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM KIL HO |
分类号 |
H01L21/02;H01L21/311;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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