| 摘要 |
A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (SiNXBYOZ) containing boron is formed by a sputtering method. As a result, the internal stress of this film becomes -5x10<10 >dyn/cm<2 >to 5x10<10 >dyn/cm<2>, preferably -10<10 >dyn/cm<2 >to 10<10 >dyn/cm<2>, and the film has high thermal conductivity, so that it typically becomes possible to prevent deterioration due to heat generated at the time of an on operation of the TFT.
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