METHOD FOR MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor integrated circuit device capable of improving the throughput, reducing the cost of a cleaning gas, and prolonging the life of a process kit by automatically detecting the end time point of cleaning in a chamber. SOLUTION: A cleaning gas converted into plasma in a plasma gas generator 8 is introduced into a chamber 2 to remove an unnecessary film deposited over the interior wall of the chamber 2 or electrodes. By a high frequency power source 9 adjusted to low output from the film formation time, a high frequency voltage is applied to a lower electrode 4 and an upper electrode 5. This voltage is detected by an RF sensor 10 and amplified by an electronic module 11. The voltage amplified by the electronic module 11 is input to a termination controller 12. The termination controller 12 automatically judges the termination of cleaning when the input voltage becomes substantially constant at a predetermined voltage or greater. COPYRIGHT: (C)2005,JPO&NCIPI