MOCVD APPARATUS, METHOD FOR FORMING FERROELECTRIC CAPACITOR AND FRAM USING THE SAME TO OBTAIN CRYSTALLINE GROWTH OF PZT WITH PREFERRED ORIENTED COLUMNAR STRUCTURE

摘要

PURPOSE: A MOCVD(Metal Organic Chemical Vapor Deposition) apparatus, a method for forming a ferroelectric capacitor and FRAM(Ferroelectric Random Access Memory) using the same are provided to obtain the crystalline growth of PZT(Pb(Zr,Ti)O3)with a preferred oriented columnar structure. CONSTITUTION: A FRAM layer is formed on the semiconductor substrate(100) within a chamber(500) performing MOCVD process. The semiconductor substrate on the susceptor(510) is heated to at least a temperature for chemical vapor deposition. A heated organometallic compound precursor gas and a heated carrier gas are injected into the chamber by a first injecting unit(520a). A heated oxidizing agent gas is injected into the chamber by a second injecting unit(520b). The pre-mixing of between the organometallic compound precursor gas and the oxidizing agent gas is inhibited by a shower head(520). A first and second gas introducing units(540,560) have a vaporizing unit(530) and a heating unit(550) respectively.