ROW REPAIR METHOD IMPROVING ROW REDUNDANCY EFFICIENCY AND SEMICONDUCTOR MEMORY DEVICE USING THE SAME, ESPECIALLY REPLACING DEFECTIVE WORD LINE IN MEMORY CELL BLOCK WITH WORD LINE INCLUDED IN REDUNDANCY GLOBAL WORD LINE IN REDUNDANCY MEMORY CELL BLOCK

摘要

PURPOSE: A row repair method improving row redundancy efficiency and a semiconductor memory device using the same are provided to improve row redundancy efficiency of a semiconductor memory device. CONSTITUTION: The semiconductor memory device comprises the first memory cell block including the first global word line, and the second memory cell block including the second global word line, and a redundancy memory cell block including the first redundancy global word line and the second redundancy global word line. According to the row repair method of the semiconductor memory device, a defective word line in the first memory cell block is replaced with a word line included in the first redundancy global word line in the redundancy memory cell block. And a defective word line in the second memory cell block is replaced with a word line included in the second redundancy global word line in the redundancy memory cell block.