REACTIVE SPUTTERING APPARATUS CAPABLE OF DEPOSITING METAL OXIDES AT HIGH SPEED BY INSTALLING SEPARATION PLATE BETWEEN SPUTTERING TARGET AND SUBSTRATE AND REACTIVE SPUTTERING METHOD USING THE SAME

摘要

PURPOSE: To provide a reactive sputtering deposition apparatus and method that deposit a metal oxide thin film on the substrate at high speed by installing a separation plate between a sputtering target and a substrate and promote oxidation of a metal target material deposited on the substrate and prevent oxidation of the metal target by injecting reactive gas near the substrate and injecting sputtering gas near the target. CONSTITUTION: The reactive sputtering deposition apparatus(10) comprises a deposition chamber(11) for forming a process atmosphere in the apparatus; a target(12) equipped with a metal material to be deposited on the substrate; a substrate(13) on which the metal material is deposited by reacting the metal material separated from the target with a reactive gas; and a separation plate(14) formed between the target and the substrate to divide the deposition chamber into a reaction chamber(11a) of the substrate side and a sputtering chamber(11b) of the target side, wherein a hole is formed on a central part of the separation plate so that the metal material reaches the substrate through the hole, wherein the apparatus further comprises a vent(15) installed on the reaction chamber to form vacuum in the deposition chamber, wherein the target comprises a cover(12b) for covering the metal material, and a sputtering gas injection port(12c) for injecting sputtering gas between the target and the cover, and wherein the apparatus further comprises a reactive gas injection port installed on the reaction chamber to supply reactive gas so that the reactive gas is reacted with the metal material to form a metal oxide film on the substrate.