METHOD OF MAKING SEMICONDUCTOR DEVICE HAVING TRENCH ISOLATION LAYER FOR CONTROLLING ROUNDING ANGLE TOP OF TRENCH WITHOUT ROUNDING CRITICAL WIDTH

摘要

PURPOSE: A method of making a semiconductor device having a trench isolation layer is provided to round a top corner of a trench without an additional etch process and restrain a moat phenomenon by using a dry-oxidation method. CONSTITUTION: A pad layer pattern is formed on a semiconductor substrate(21) to define an isolation region. A trench(27) is formed by etching an exposed surface of the semiconductor substrate. A plasma process is performed to remove impurities from a surface of the trench and round a top corner of the trench. An oxide layer is removed after the plasma process. A sidewall oxide layer(29) is formed by oxidizing a sidewall of the trench. A liner nitride layer(30) is formed on the sidewall oxide layer. A gap-fill insulating layer(31) is formed to bury the trench on the liner nitride layer. An isolation layer is formed by planarizing the gap-fill insulating layer.