发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same capable of permitting the individual electrical inspection of a first semiconductor device (10) and a second semiconductor device (20) and necessitating no complicated inspection program for simultaneous measurement, while permitting the restriction of the transmission delay and transmission loss of an electric signal due to the shortening of a wiring length in the semiconductor device and the miniaturization of the device. <P>SOLUTION: The semiconductor device is constituted of the laminate of the second semiconductor device (20) accommodating a second semiconductor element (21) reduced in the number of terminals relatively, and the first semiconductor device (10) accommodating a first semiconductor element (11) increased in the number of terminals relatively. The first semiconductor device (10) is a multi-layered wiring substrate arranged in the lower stage of the second semiconductor device (20), and at least one set or more of the terminals of the second semiconductor device (20) are connected electrically to the first semiconductor element (21) accommodated in the first semiconductor device (20). <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005026469(A) 申请公布日期 2005.01.27
申请号 JP20030190560 申请日期 2003.07.02
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YUI TAKASHI;FUKUDA TOSHIYUKI;FUJIMOTO HIROAKI;KUNITOMO MINOBU;MIYAZAWA HIDEO
分类号 H01L23/32;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/32
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