Ag BASE SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME
摘要
<p>Ag base sputtering target (6) exhibiting a three-dimensional dispersion of crystal grain diameter of 18% or less. The three-dimensional dispersion of crystal grain diameter is as follows. The sputtering target is sliced with a plane parallel to a sputtering face to thereby expose multiple sputtering faces. Multiple spots are selected on each of the exposed sputtering faces. The value A1 and value B1 are calculated according to the following formulae from the crystal grain diameters at all the selected spots. The larger one of these values A1 and B1 is referred to as the three-dimensional dispersion of crystal grain diameter. A1 = (Dmax-Dave)/Davex100 (%) B1 = (Dave-Dmin)/Davex100 (%) Dmax: maximum of the crystal grain diameters (D) at all selected spots Dmin: minimum of the crystal grain diameters (D) at all selected spots Dave: average of the crystal grain diameters (D) at all selected spots</p>
申请公布号
WO2005007923(A1)
申请公布日期
2005.01.27
申请号
WO2004JP10380
申请日期
2004.07.14
申请人
KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC.;TAKAGI, KATSUTOSHI;NAKAI, JUNICHI;TAUCHI, YUUKI;MATSUZAKI, HITOSHI;FUJII, HIDEO