| 摘要 |
<p>Semiconductor components, esp. of Ge, have one face at least covered with an insulating film leaving windolws for the application of contacts. a first layer of metallising esp. of Ag 400-800 angstroms thick, is deposited overall by evaporation followed by a second layer of esp. of Sb 50-150 angstroms thick at 150-250 degrees C. The whole is then annealed at 380-520 degrees C. at which allowing does not take place, for 5-15 mins. in a protective atmosphere. a good bond is formed between the Ge and the Ag without any barrier layer but the Ag-Sb sandwich is easily peeled off from the insulation film. A further metallising layer of Au may follow the Sb layer. Intermediate masking processes, with risk of contamination are avoided.</p> |
