| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to guarantee an excellent operation speed corresponding to high integration and sufficient capacitance by varying the structure of a lower electrode contact layer and by remarkably increasing the surface area of a lower electrode while reducing contact resistance between the lower electrode and the lower electrode contact layer. CONSTITUTION: An interlayer dielectric(21) is formed on a semiconductor substrate(20). An insulation layer for a capacitor is formed on the interlayer dielectric. The insulation layer and the interlayer dielectric are etched to form a contact hole exposing a part of the substrate. A lower electrode contact layer(100) is filled in the contact hole and comes in contact with the substrate, composed of a lower plug(24) of a conductive layer and an upper plug(25) of an insulation layer. The insulation layer for the capacitor is etched to form a hole exposing the lower electrode contact layer and the interlayer dielectric in the periphery of the lower electrode contact layer. A lower electrode is formed on the hole to surround the lower electrode contact layer.
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