METHOD FOR FABRICATING NVM DEVICE TO UNIFORMLY REDUCE RESISTANCE OF GATE

摘要

PURPOSE: A method for fabricating an NVM(non-volatile memory) device is provided to uniformly reduce the resistance of a gate by performing a uniform ion implantation process and a heat process on a control gate electrode surrounding a floating gate electrode. CONSTITUTION: A semiconductor substrate(110) is prepared which includes a tunnel oxide layer(116) and a floating gate electrode(118). An insulation layer and a conductive layer(122) for a control gate are formed along the step on the resultant structure. Impurity ions are implanted into the conductive layer for the control gate. The insulation layer and the conductive layer for the control gate are patterned to form a control gate electrode surrounding the floating gate electrode.